Fabrication of 3D micro-cantilevers based on MBE-grown strained semiconductor layers

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 2210-2213

  Iwase, Hiuma ^a   Choi, Hyonkwan ^a   Akabori, Masashi ^a   Suzuki, Toshi kazu ^a   Yamada, Syoji ^a   Yamamoto, Daisuke ^b   Ando, Toshio ^b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Nanoscale structure fabrication

Indexed keywords

ATOMIC FORCE MICROSCOPY; CANTILEVER BEAMS; ETCHING; NATURAL FREQUENCIES;

CANTILEVERS; NANOSCALE STRUCTURE FABRICATION; SACRIFICE LAYER ETCHING PROCESS;

MOLECULAR BEAM EPITAXY;

EID: 41349097737     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.11.016     Document Type: Article

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