Electrical properties and magnetoresistance of nanogranular SnO2 films

Acta Physica Polonica A

Volumn 113, Issue 3, 2008, Pages 1043-1046

  Ksenevich, V K ^a   Dovzhenko, T A ^a   Dorosinets, V A ^a   Bashmakov, I A ^a   Melnikov, A A ^b   Wieck, A D ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; LOW TEMPERATURE EFFECTS; MAGNETORESISTANCE; MATHEMATICAL MODELS; TIN DIOXIDE;

CONDUCTION MECHANISMS; CONTACTS BARRIERS; TUNNELLING MODELS;

OXIDE FILMS;

EID: 41349094831     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.113.1043     Document Type: Conference Paper

References (9)

1. Y. Zhang, A. Kolmakov, S. Chretien, H. Metiu, M. Moskovits, Nano Lett. 4, 403 (2004).
2. S. Ferrere, A. Zaban, B.A. Gsegg, J. Phys. Chem. B 101, 4490 (1997).
3. S. Mathur, S. Barth, H. Shen, J. C. Pyun, U. Werner, Small 1, 713 (2005).
4. J. Zhu, Zh. Lu, S.T. Aruna, D. Aurbach, A. Gedanken, Chem. Matter 12, 2557 (2000).
5. K.L. Chopra, S. Major, D.K. Pandya, Thin Solid Films 102, 1 (1993).
6. A.B. Kaiser, S.A. Rogers, Y.W. Park, Mol. Cryst. Liq. Cryst. 415, 115 (2004).
7. P. Sheng, Phys. Rev. B 21, 2180 (1980).
8. B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin 1984.
9. U. Sivan, O. Entin-Wohlman, Y. Imry, Phys. Rev. Lett. 60, 1566 (1988).