Vertex Channel Field Effect Transistor (VC-FET) technology featuring high performance and highly manufacturable trench capacitor DRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 36-37

  Kido, M ^b   Kito, M ^b   Katsumata, R ^b   Kondo, M ^b   Ito, S ^b   Matsuo, K ^a   Miyano, K ^a   Mizushima, I ^a   Sato, M ^b   Tanaka, H ^b   Yasutake, H ^b   Nagata, Y ^b   Hoshino, T ^b   Aoki, N ^b   Aochi, H ^b   Nitayama, A ^b  

^a Process and Manufacturing Engineering Center   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; GATE DIELECTRICS;

CONVENTIONAL PLANAR DEVICES; VERTEX CHANNEL FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 41149085126     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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4. Deok-Hyung Lee et al., IEDM. Dig., p407, 2003.
5. C.H.Lee et al., VLSI Tech. Dig., p130, 2004.
6. M.Kito et al, VLSI Tech. Dig., p32, 2005.
7. H. Irie et al, IEDM. Dig., p225, 2004.