Carrier trapping centers in alkaline-earth sulfide crystals doped with rare-earths

Chinese Journal of Luminescence

Volumn 29, Issue 1, 2008, Pages 75-80

  He, Zhi Yi ^a   Chen, Ming Song ^a  

^a GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY   (China)

Author keywords

Carrier capturing; Electron trap; EPR; Hole trap; Photo stimulated luminescence

Indexed keywords

EID: 40749103851     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. Chen C, Teo K L, Chong T C, et al. Analysis of the thermal behavior of photoluminescent optical memory based on CaS: Eu,Sm media [J]. Phys. Rev. B, 2005, 72(19):195108-1-8.
2. Wu J, Newman D, Viney I. Time-related luminescence spectroscopic investigation of electron trapping and recombination in infrared stimulated luminescence [J]. Appl. Phys. B: Lasers and Optics, 2004, 79 (7):857-862.
3. 3+ [J]. J. Appl. Phys., 2006, 100(7):073701-1-5.
4. Teo K L, Chena C, Chong T C. Nanoscale cube-on-cube growth and characterization of SrS:Eu, Sm optical memory material [J]. J. Crystal Growth, 2004, 268(3-4):602-606.
5. Danilkin M I, Kerikmäe M P, Klimonsky S O, et al. Energy transfer and storage mechanisms in infrared-sensitive storage phosphor SrS: Eu, Sm [J]. Nuc. Instr. Meth. Phys. Res. A, 2005, 537 (1-2) :89-92.
6. Yasuaki Tamura, Atsushi Shibukawa. Optical studies of CaS: Eu, Sm infrared stimulable phosphors [J]. Jpn. J. Appl. Phys. Part 1, 1993, 32(7) :3187-3196.
7. Chakrabarti K, Mathur V K, Thomas L A,et al. Charge trapping and mechanism of stimulated luminescence in CaS:Ce, Sin [J]. J. Appl. Phys., 1989, 65(5) :2021-2023.
8. 2O glass [J]. Mater. Res. Bull., 2000, 35(5):703-709.
9. 3+ ions in lithium borate and lithium fluoroborate glasses [J]. J. Alloys Compd., 2000, 307(1-2):82-95.
10. Monge M A, Gonzalez R, Munoz J E, et al. Photoconversion and dynamic hole recycling procycling in anion vacancies in neutron-irradiated MgO crystals [J]. Phys. Rev. B, 1999, 60(6) :3787-3791.
11. 2+[J]. J. Phys. : Condensed Matter, 1990, 2(32) :6837-6846.