Exciton and multi-exciton structures in GaAs quantum dots studied by single-photon correlation spectroscopy

Journal of Luminescence

Volumn 128, Issue 5-6, 2008, Pages 800-802

  Kihira, T ^a   Tanaka, S ^a   Yamagiwa, M ^b   Ogawa, Y ^a   Minami, F ^a   Koguchi, N ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Droplet epitaxy; Exciton; GaAs; Micro photoluminescence; Quantum dot

Indexed keywords

PHOTOLUMINESCENCE; PHOTON CORRELATION SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

DROPLET EPITAXY; EMISSION PEAKS; EXCITATION POWER DEPENDENCE;

EXCITONS;

EID: 40649090866     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2007.11.011     Document Type: Article

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