Spatially direct charged exciton photoluminescence in undoped ZnSeBeTe type-II quantum wells

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Ji, Z W ^a   Takeyama, S ^a   Mino, H ^b   Oto, K ^b   Muro, K ^b   Akimoto, R ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b CHIBA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; EXCITONS; OPTICAL TRANSITIONS; PHOTOEXCITATION; PHOTOLUMINESCENCE; ZINC COMPOUNDS;

CHARGED EXCITON; EXCITON TRANSITION; PHOTOLUMINESCENCE (PL) SPECTRA;

SEMICONDUCTOR QUANTUM WELLS;

EID: 40549144028     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2890486     Document Type: Article

References (15)

1. Z. W. Ji, H. Yamamoto, H. Mino, R. Akimoto, and S. Takeyama, Physica E (Amsterdam) PELNFM 1386-9477 22, 632 (2004).
2. Z. W. Ji, H. Mino, K. Oto, R. Akimoto, K. Ono, and S. Takeyama, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/21/1/016 21, 87 (2006).
3. D. R. Yakovlev, C. Sas, B. König, L. Hansen, W. Ossau, G. Landwehr, L. W. Molenkamp, and A. Waag, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1357446 78, 1870 (2001).
4. G. Landwehr, D. R. Yakovlev, M. Keim, G. Reuscher, W. Ossau, A. Waag, A. V. Platonov, V. P. Kochereshko, and E. L. Ivchenko, Superlattices Microstruct. SUMIEK 0749-6036 10.1006/spmi.2000.0863 27, 515 (2000).
5. A. Waag, F. Fischer, K. Schull, T. Baron, H.-J. Lugauer, T. H. Litz, U. Zehnder, W. Ossau, T. Gerhard, M. Keim, G. Reuscher, and G. Landwehr, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118422 70, 280 (1997).
6. A. A. Maksimov, A. V. Zaitsev, I. I. Tartakovskii, V. D. Kulakovskii, D. R. Yakovlev, W. Ossau, M. Keim, G. Reuscher, A. Waag, and G. Landwehr, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124651 75, 1231 (1999).
7. S. V. Zaitsev, A. A. Maksimov, P. S. Dorozhkin, V. D. Kulakovskii, I. I. Tartakovskii, D. R. Yakovlev, W. Ossau, L. Hansen, G. Landwehr, and A. Waag, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.245310 66, 245310 (2002).
8. O. Krebs and P. Voisin, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.1829 77, 1829 (1996).
9. A. A. Maksimov, I. I. TartakovskiI, D. R. Yakovlev, M. Bayer, and A. Waag, JETP Lett. JTPLA2 0021-3640 83, 141 (2006).
10. J. Haetty, E. H. Lee, H. Luo, A. Petrou, and J. Warnock, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(98)00349-4 108, 205 (1998).
11. Z. W. Ji, Y. Enya, H. Mino, K. Oto, K. Muro, R. Akimoto, and S. Takeyama, J. Phys.: Conf. Ser. JPCSDZ 1742-6588 10.1088/1742-6596/51/1/099 51, 427 (2006).
12. H. Mino, Z. W. Ji, A. Kano, K. Oto, K. Muro, R. Akimoto, and S. Takeyama, J. Phys.: Conf. Ser. JPCSDZ 1742-6588 51, 399 (2006).
13. A. Manassen, E. Cohen, A. Ron, E. Linder, and L. N. Pfeiffer, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.10609 54, 10609 (1996).
14. K. S. Lee, C. D. Lee, Y. M. Kim, and J. M. Smith, Solid State Commun. SSCOA4 0038-1098 110, 97 (1999).
15. A. A. Maksimov, S. V. Zaitsev, I. I. Tartakovskii, V. D. Kulakovskii, N. A. Gippius, D. R. Yakovlev, W. Ossau, G. Reuscher, A. Waag, and G. Landwehr, in Proceedings of the 25th International Conference on the Physics of Semiconductors (ICPS25), edited by, N. Miura, and, T. Ando, (Springer, Berlin, 2001), p. 637.