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Volumn 4, Issue 7, 2007, Pages 2650-2653
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Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H2 gas generation
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL COMPOSITIONS;
HEXAGONAL COLUMNS;
NEUTRAL PH;
NITRIDE SEMICONDUCTORS;
PH SOLUTIONS;
PHOTOELECTROCHEMICAL REACTIONS;
CRYSTALS;
DISSOLUTION;
ELECTRIC CONDUCTIVITY;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
GAS FUEL STORAGE;
GEOPHYSICAL PROSPECTING;
NITRIDES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR MATERIALS;
SOLUTIONS;
SURFACE MORPHOLOGY;
SURFACE REACTIONS;
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EID: 40549103725
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200674917 Document Type: Conference Paper |
Times cited : (17)
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References (8)
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