Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots

Nano Letters

Volumn 8, Issue 2, 2008, Pages 577-581

  Kalliakos, Sokratis ^a   Pellegrini, Vittorio ^a   Garcia, Cesar Pascual ^a   Pinczuk, Aron ^b   Pfeiffer, Loren N ^c   West, Ken W ^c  

^a INFM   (Italy)

^b Department of Earth and Environmental Sciences   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON POPULATION; ENERGY-LEVEL STRUCTURE; METALLIC GATES; OPTICAL CONTROL;

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; LIGHT SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM; GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; LIGHT; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; ULTRASTRUCTURE;

ALUMINUM; ARSENICALS; ELECTRON TRANSPORT; GALLIUM; LIGHT; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; QUANTUM DOTS;

EID: 40449132771     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl072904p     Document Type: Article

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