A thermally activated exciton-exciton collision process in ZnO microrods

Chinese Physics Letters

Volumn 21, Issue 8, 2004, Pages 1640-1643

  Zhao, Dong Xu ^a   Liu, Yi Chun ^a,b   Shen, De Zhen ^a   Lu, You Ming ^a   Zhang, Ji Ying ^a   Fan, Xi Wu ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; ZINC OXIDE;

BAND EMISSION; COLLISION PROCESS; EXCITATION INTENSITY; HIGH-ORDER TRANSITIONS; INTENSITY-DEPENDENT; MICRORODS; PHOTOLUMINESCENCE MEASUREMENTS; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THERMALLY ACTIVATED; ZNO MICRORODS;

EXCITONS;

EID: 4043084062     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/8/063     Document Type: Article

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