A closed-form model for thermionic trap-assisted tunneling

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 557-564

  Sathaiya, D Mahaveer ^a,b   Karmalkar, Shreepad ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

AlGaN GaN HEMT; Closed form model; Gate leakage; Trap assisted tunneling (TT); Triangular barrier

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL GEOMETRY; ELECTRON TRAPS; INTEGRATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; THERMIONIC EMISSION;

CLOSED-FORM MODEL; GATE LEAKAGE; TRAP-ASSISTED TUNNELING;

ELECTRON TUNNELING;

EID: 39749203007     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.912993     Document Type: Article

References (7)

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