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Volumn , Issue , 2007, Pages

1550nm Optical interconnect transceiver with low voltage electroabsorption modulators flip-chip bonded to 90nm CMOS

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL INTERCONNECT TRANSCEIVERS; OPTICAL PACKAGING;

EID: 39749159619     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/OFC.2007.4348330     Document Type: Conference Paper
Times cited : (3)

References (5)
  • 5
    • 0027595647 scopus 로고
    • Modeling and simulation of hot-carrier-induced device degradation in MOS circuits
    • May
    • Y. Leblebici and S. Kang, "Modeling and simulation of hot-carrier-induced device degradation in MOS circuits," IEEE Journal of Solid-State Circuits, vol. 28, no. 5, pp. 585-595, May 1993.
    • (1993) IEEE Journal of Solid-State Circuits , vol.28 , Issue.5 , pp. 585-595
    • Leblebici, Y.1    Kang, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.