High-pressure synthesis of filled skutterudite CeOs4As12

Physica B: Condensed Matter

Volumn 403, Issue 5-9, 2008, Pages 856-858

  Sekine, C ^a   Abe, R ^a   Takeda, K ^a   Matsuhira, K ^b   Wakeshima, M ^c  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

CeOs4As12; Electrical resistivity; Kondo semiconductor; Skutterudite

Indexed keywords

ACTIVATION ENERGY; HIGH PRESSURE EFFECTS; KONDO EFFECT; MAGNETIC SUSCEPTIBILITY; SEMICONDUCTOR MATERIALS; TRANSPORT PROPERTIES;

KONDO SEMICONDUCTORS; SKUTTERUDITE;

CERIUM COMPOUNDS;

EID: 39749134865     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.10.072     Document Type: Article

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