Electrical and magnetic properties of Kondo semiconductor CeRu4 As12

Journal of Magnetism and Magnetic Materials

Volumn 310, Issue 2 SUPPL. PART 1, 2007, Pages 260-262

  Sekine, Chihiro ^a   Hoshi, Nobuyuki ^a   Takeda, Keiki ^a   Yoshida, Tomoo ^a   Shirotani, Ichimin ^a   Matsuhira, Kazuyuki ^b   Wakeshima, Makoto ^c   Hinatsu, Yukio ^c  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

CeRu4 As12; Electrical resistivity; Kondo semiconductor; Skutterudite; Specific heat

Indexed keywords

ACTIVATION ENERGY; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; MAGNETIC PROPERTIES; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL); THERMODYNAMIC PROPERTIES; X RAY POWDER DIFFRACTION;

ATOMIC POSITION; KONDO SEMICONDUCTOR; RIETVELD ANALYSIS; SKUTTERUDITE;

CERIUM COMPOUNDS;

EID: 33847281977     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.10.038     Document Type: Article

References (9)

1. Braun D.J., et al. J. Solid State Chem. 32 (1980) 357
2. Shirotani I., et al. J. Solid State Chem. 142 (1999) 146
3. Grandjean F., et al. J. Phys. Chem. Solids 45 (1984) 877
4. Morelli D.T., and Meisner G.P. J. Appl. Phys. 77 (1995) 3777
5. Izumi F., et al. Mater. Sci. Forum 321-324 (2000) 198
6. H. Harima, private communication.
7. Shirotani I., et al. Phys. Rev. B 56 (1997) 7866
8. Meisner G.P., et al. J. Appl. Phys. 57 (1985) 3073
9. Takabatake T., et al. J. Magn. Magn. Mater. 177-181 (1998) 277