Theory of photogalvanic effect in asymmetric nanostructure arrays

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 5, 2008, Pages 1264-1266

  Chepelianskii, A D ^a   Entin, M V ^b   Magarill, L I ^b   Shepelyansky, D L ^c  

^a ECOLE NORMALE SUPÉRIEURE   (France)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

Antidot lattices; Photogalvanic effect

Indexed keywords

BOLTZMANN EQUATION; COMPUTER SIMULATION; CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; ELECTRONS; PHOTOCURRENTS; SPIN POLARIZATION;

ANTIDOT LATTICES; ASYMMETRIC NANOSTRUCTURE ARRAYS; FREE ELECTRON MOTION; PHOTOGALVANIC EFFECTS;

NANOSTRUCTURED MATERIALS;

EID: 39649088945     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.08.046     Document Type: Article

References (14)

1. Glass A.M., Linde D., and Negran T.J. Appl. Phys. Lett. 25 (1974) 233
2. Belinicher V.I., Malinovskii V.K., and Sturman B.I. Sov. Phys.-JETP 46 (1977) 362
3. Belinicher V.I., and Sturman B.I. Sov. Phys.-Usp. Fiz. Nauk 23 (1980) 199
4. Baskin E.M., Blokh M.D., Entin M.V., and Magarill L.I. Phys. Stat. Sol. (b) 83 (1977) K97
5. Ivchenko E.L., and Pikus G.E. In: Tushkevich V.M., and Frenkel V.Ya. (Eds). Semiconductor Physics (1986), Consultants Bureau, New York 427
6. Thouless D.J. Phys. Rev. B 27 (1983) 6083
7. Brouwer P.W. Phys. Rev. B 58 (1998) R10135
8. Moskalets M., and Büttiker M. Phys. Rev. B 66 (2002) 205320
9. Braginskii L.S., Makhmudian M.M., and Entin M.V. JETP 100 (2005) 920
10. Mahmoodian M.M., Braginsky L.S., and Entin M.V. Phys. Rev. B 74 (2006) 125317
11. Chepelianskii A.D., and Shepelyansky D.L. Phys. Rev. B 71 (2005) 052508
12. Cristadoro G., and Shepelyansky D.L. Phys. Rev. E 71 (2005) 036111
13. Chepelianskii A.D. Eur. Phys. J. B 52 (2006) 389
14. Entin M.V., and Magarill L.I. Phys. Rev. B 72 (2006) 205206