Epitaxial growth of CdSexTe1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1081-1087

  Amir, F Z ^a   Clark, K ^a   Maldonado, E ^a   Kirk, W P ^a   Jiang, J C ^b   Ager III, J W ^c   Yu, K M ^c   Walukiewicz, W ^c  

^a University of Texas at Arlington   (United States)

^b UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Cadmium compounds; B2. Semiconducting II VI materials

Indexed keywords

CADMIUM COMPOUNDS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH CONDITIONS; SINGLE-PHASE EPILAYERS;

THIN FILMS;

EID: 39649087337     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.055     Document Type: Article

References (9)

1. Eisen Y., and Shor A. J. Crystal Growth 184-185 (1998) 1302
2. Melnikov A.A. J. Crystal Growth 19 (1999) 6637
3. Noda D., Aoki T., Nakahishi Y., and Hatanaka Y. J. Crystal Growth 214-215 (2000) 1121
4. Fiederle M., Ebling D., Eiche C., Hofman D.M., Salk M., Stadler W., Benz K.W., and Meyer B.K. J. Crystal Growth 138 (1994) 529
5. Russak M.A. J. Vac. Sci. Technol. A 3 2 (1985) 433
6. Brill G., Chen Y., Amirtharaj P.M., Sarney W., Chandler-Horowitz D., and Dhar N.K. J. Electron. Mater. 34 (2005) 655
7. Fisher R., Morkoc H., Neuman D.A., Zabel H., Choi C., Otsuka N., Longerbone M., and Erickson L.P. J. Appl. Phys. 60 (1986) 1640
8. Zhou X., Jiang S., and Kirk W.P. J. Crystal Growth 175-176 (1997) 624
9. Sze S. Physics of Semiconductor Devices. second ed. (1981), Cambridge University Press, Cambridge p. 40