Analysis of junction leakage in advanced germanium P+/n junctions

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 454-457

  Eneman, G ^a   Sicart i Casain, O ^a   Simoen, E ^a   Brunco, D P ^b   De Jaeger, B ^a   Satta, A ^a   Nicholas, G ^c   Claeys, C ^a,d   Meuris, M ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b INTEL CORPORATION   (United States)

^c SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; LEAKAGE CURRENTS; TUNNEL JUNCTIONS;

HURCKX MODEL; JUNCTION LEAKAGE; SHOCKLEY-READ-HALL (SRH); TRAP-ASSISTED TUNNELING (TAT);

SEMICONDUCTOR JUNCTIONS;

EID: 39549099286     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430976     Document Type: Conference Paper

References (8)

1. C. Claeys and E. Simoen, Eds., Germanium-based technologies - From materials to devices. Elsevier, 2007.
2. P. Zimmerman et al., "High performance Ge pMOS devices using a Si-compatible process flow," in IEDM Tech. Dig., 2006, p. 655.
3. G. Nicholas et al., "High performance deep submicron Ge pMOSFETs with halo implants," IEEE Transactions on Electron Devices, 2007, (Submitted).
4. B. De Jaeger et al., "High performance high-k/metal gate Ge pMOSFETs with gate lengths down to 125 nm and halo implant," in ESSDERC Tech. Dig., 2007, (Submitted).
5. Y. Sun et al., "Modeling of boron and phosphorus implantation into (100) germanium," IEEE Transactions on Electron Devices, vol. 52, no. 1, p. 91, 2005.
6. "SRIM - The stopping and range of ions in matter," http://www.srim.org/.
7. G. Hurckx et al., "A new recombination model for device simulation including tunneling," IEEE Transactions on Electron Devices, vol. 39, no. 2, p. 331, 1992.
8. A. Chynoweth et al., "Internal field emission at narrow silicon and germanium p-n junctions," Physical Review, vol. 118, no. 2, p. 425, 1960.