Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors

IEEE Electron Device Letters

Volumn 29, Issue 2, 2008, Pages 165-167

  Chen, Chih Yang ^a   Ma, Ming Wen ^a   Chen, Wei Cheng ^b   Lin, Hsiao Yi ^b   Yeh, Kuan Lin ^b   Wang, Shen De ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b InnoLux Display Corporation   (Taiwan)

Author keywords

Charge pumping (CP) technique; Low temperature polycrystalline silicon thin film transistors (LTPS TFTs); Negative bias temperature instability (NBTI)

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; GRAIN BOUNDARIES; POLYSILICON; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY;

BULK TRAP STATES; CHARGE-PUMPING (CP) TECHNIQUE; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); OXIDE TRAP STATES; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 39549087426     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.914083     Document Type: Article

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