Pressure dependence of elastic constants in zinc-blende III-N and their influence on the light emission in nitride heterostructures

Acta Physica Polonica A

Volumn 105, Issue 6, 2004, Pages 559-566

  Lepkowski S P ^a   Majewski, J A ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELASTICITY; HETEROJUNCTIONS; LINEAR SYSTEMS; NITRIDES; OPTICAL PROPERTIES; PIEZOELECTRIC DEVICES; POISSON DISTRIBUTION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; STRAIN;

ELASTIC CONSTANTS; ELASTICITY THEORY; LATTICE MISMATCH; PRESSURE DEPENDENCE;

LIGHT EMISSION;

EID: 3943095327     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.105.559     Document Type: Conference Paper

References (22)

1. M.D. Frogley, J.R. Downes, D.J. Dunstan, Phys. Rev. B 62, 13612 (2000).
2. S.W. Ellaway, D.A. Faux, Phys. Status Solidi B 235, 437 (2003).
3. S.W. Ellaway, D.A. Faux, J. Appl. Phys. 92, 3027 (2002).
4. V. Holy, G. Springholz, M. Pinczolits, G. Bauer, Phys. Rev. Lett. 83, 356 (1999).
5. R. Kato, J. Hama, J. Phys., Condens. Matter 6, 7617 (1994).
6. G. Vaschenko, C.S. Menoni, D. Patel, C.N. Tome, B. Clausen, N.F. Gardner, J. Sun, W. Gotz, H.M. Ng, A.Y, Cho, Phys. Status Solidi B 235, 238 (2003).
7. S.P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies, Appl. Phys. Lett. 79, 1483 (2001).
8. G. Vaschenko, D. Patel, C.S. Menoni, S. Keller, U.K. Mishra, S.P. DenBaars, Appl. Phys. Lett. 78, 640 (2001).
9. T. Suski, H. Teisseyre, S.P. Łepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, S.F. Chichibu, Appl. Phys. Lett. 81, 232 (2002).
10. W.E. Pickett, Comp. Phys. Rep. 9, 117 (1989).
11. G. Kresse, J. Furthmuller, Phys. Rev. B 54, 11169 (1996).
12. S. Bhagavantam, Crystal Symmetry and Physical Properties, Academic Press, London 1966, p. 147.
13. A.F. Wright, J. Appl. Phys. 82, 2833 (1997).
14. F. Grosse, J. Neugebauer, Phys. Rev. B 63, 085207 (2001).
15. A. Polian, in: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors,Eds. J.H. Edgar, S. Strite, I. Akasaki, H. Amano, C. Wetzel, Datareviews Series 3, INSPEC, London 1999, Al.3.
16. S.-H. Wei, A. Zunger, Phys. Rev. B 60, 5404 (1999).
17. E. Anastassakis, Phys. Rev. B 46, 13244 (1992).
18. C.G. Van de Walle, J. Neugebauer, Appl. Phys. Lett. 70, 2577 (1997).
19. P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Łepkowski, N.E. Christensen, A. Svane, M. Hansen, S.P. DenBaars, B. Damilano, N. Grandjean, J. Massie, Phys. Rev. B 64, 115319 (2001).
20. S.K. Pugh, D.J. Dugdale, S. Brand, R.A. Abram, Semicond. Sci. Technol. 14, 23 (1999).
21. L.K. Teles, J. Furthmuller, L.M.R. Scalfaro, J.R. Leite, F. Bechstedt, Phys. Rev. B 63, 085204-1 (2001).
22. P. Perlin, W. Trzeciakowski, E. Litwin-Staszewska, J. Muszalski, M. Micovic, Semicond. Sci. Technol 9, 2239 (1994).