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Volumn 105, Issue 6, 2004, Pages 637-644
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Compositional dependence of the formation energies of substitutional and interstitial Mn in partially compensated (Ga,Mn)As
a b,c a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION;
CRYSTALS;
ELECTRON ENERGY LEVELS;
FERMI LEVEL;
IMPURITIES;
MANGANESE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR MATERIALS;
DENSITY FUNCTIONAL THEORY;
DILUTE MAGNETIC SEMICONDUCTORS (DMS);
DOPANTS;
FORMATION ENERGIES;
ARSENIC COMPOUNDS;
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EID: 3943074437
PISSN: 05874246
EISSN: None
Source Type: Journal
DOI: 10.12693/APhysPolA.105.637 Document Type: Conference Paper |
Times cited : (11)
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References (16)
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