Fourier transform infrared spectroscopy and raman spectrum analyses of monocrystalline α-Si3N4 nanowires

Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society

Volumn 36, Issue 1, 2008, Pages

  Xie, Ting ^a,b   Ye, Min ^a,b   Wu, Yucheng ^a,b   Zhang, Lide ^b  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

Fourier transform infrared spectrum; Growth mechanism; Nanowire; Raman spectrum; Silicon nitride

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; NANOWIRES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GROWTH MECHANISM; MONOCRYSTALLINE SILICON WAFERS; RAMAN SPECTRUM; VAPOR SOLID PROCESS;

SILICON NITRIDE;

EID: 39349087771     PISSN: 04545648     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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