Rectifying property and magnetocapacitance in multiferroic p-n junction

Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

  Yang, J J ^a   Guo, S M ^a   Luo, L B ^a   Xiong, C M ^a   Zhao, Y G ^a   He, Y J ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; HETEROJUNCTIONS; PULSED LASER DEPOSITION;

FERROMAGNETIC TRANSITION; MAGNETOCAPACITANCE;

CAPACITANCE;

EID: 39349084660     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2883942     Document Type: Article

References (17)

1. H. Schmid, Ferroelectrics FEROA8 0015-0193 62, 317 (1994).
2. W. Eerenstein, N. D. Mathur, and J. F. Scott, Nature (London) NATUAS 0028-0836 10.1038/nature05023 442, 756 (2006).
3. W. Prellier, M. P. Singh, and P. Murugavel, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/17/30/R01 17, R803 (2005).
4. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2002); H. B. Lu, S. Y. Dai, Z. H. Chen, L. Yan, Y. L. Zhou, and G. Z. Yang, Chin. Sci. Bull. CSBUEF 1001-6538 10.1360/02ww0310 48, 1328 (2003); J. R. Sun, C. M. Xiong, T. Y. Zhao, S. Y. Zhang, Y. F. Chen, and B. G. Shen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1664032 84, 1528 (2004); C. M. Xiong, Y. G. Zhao, B. T. Xie, P. L. Lang and K. J. Jin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2006980 88, 193507 (2006); C. M. Xiong, Y. G. Zhao, Z. H. Zhao, Z. Q. Kou, Z. H. Chang, H. F. Tian, H. X. Yang, and J. Q. Li, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2357036 89, 143510 (2006).
5. N. A. Hill, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp000114x 104, 6694 (2000).
6. A. M. dos Santos, S. Parashar, A. R. Raju, Y. S. Zhao, A. K. Cheetham, and C. N. Rao, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(02)00087- X 122, 49 (2002).
7. C. H. Yang, T. Y. Koo, S. H. Lee, C. Song, K. B. Lee, and Y. H. Jeong, Europhys. Lett. EULEEJ 0295-5075 10.1209/epl/i2005-10540-1 74, 348 (2006).
8. A. Sharan, I. Ahn, C. Chen, R. W. Collins, J. Lettieri, D. Schlom, and V. Gopalan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1632544 83, 5169 (2003).
9. M. Gajek, M. Bibes, M. Varela, J. Fontcuberta, G. Herranz, S. Fusil, K. Bouzehouane, A. Barth́ĺmy, and A. Fert, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2162048 99, 08E540 (2006).
10. C.-H. Yang, S.-H. Lee, T. Y. Koo, and Y. H. Jeon, Phys. Rev. B PRBMDO 0163-1829 75, 140104(R) (2007).
11. W. Eerenstein, F. D. Morrison, J. F. Scott, and N. D. Mathur, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2039988 87, 101906 (2005).
12. H. Chiba, T. Atou, J. F. Scott, and Y. Syono, J. Solid State Chem. JSSCBI 0022-4596 10.1006/jssc.1997.7432 132, 139 (1997).
13. S.-J. Lee, K.-Y. Kang, and S.-K. Han, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124819 75, 1784 (1999).
14. S. M. Guo, Y. G. Zhao, C. M. Xiong, and P. L. Lang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2393148 89, 223506 (2006).
15. Y. Watanabe, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.789 57, 789 (1998); Y. Watanabe, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.11257 59, 11257 (1999).
16. E. Montanari, G. Calestani, L. Righi, E. Gilioli, F. Bolzoni, K. S. Knight, and P. G. Radaelli, Phys. Rev. B PRBMDO 0163-1829 75, 220101(R) (2007).
17. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).