Enhancement of non-geminate electron-hole pair recombination induced by strong electric field in hydrogenated amorphous silicon (a-Si:H): Effective-temperature concept

Philosophical Magazine Letters

Volumn 88, Issue 1, 2008, Pages 9-17

  Aoki, T ^a   Ohrui, N ^a   Fujihashi, C ^a   Shimakawa, K ^b  

^a TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^b GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; HYDROGENATION;

EFFECTIVE-TEMPERATURE THEORY; INTERPLAY;

AMORPHOUS SILICON;

EID: 38949209154     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/09500830701666188     Document Type: Article

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