Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure

Materials Science and Engineering: B

Volumn 148, Issue 1-3, 2008, Pages 16-18

  Tsubouchi, K ^a   Ohkubo, I ^a   Harada, T ^a   Kumigashira, H ^a,b   Matsumoto, Y ^c   Ohnishi, T ^a   Lippmaa, M ^a   Koinuma, H ^a,b   Oshima, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Epitaxy of thin films; Oxides; Reflection high energy electron diffraction (RHEED) techniques

Indexed keywords

EPITAXIAL GROWTH; IN SITU PROCESSING; OXIDES; OXYGEN; PRESSURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

EPITAXIAL THIN FILMS; IN SITU MONITORING; INTENSITY OSCILLATIONS; OXYGEN PRESSURE;

THIN FILMS;

EID: 38949205874     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.09.005     Document Type: Article

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