Surface potential relaxation of ferroelectric domain investigated by kelvin probe force microscopy

Integrated Ferroelectrics

Volumn 85, Issue 1, 2006, Pages 25-30

  Kim, Jiyoon ^a   Kim, Yunseok ^a   No, Kwangsoo ^a   Bhlmann, Simon ^b   Hong, Seungbum ^b   Nam, Yun Woo ^b   Kim, Seung Hyun ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c INOSTEK Inc   (South Korea)

Author keywords

Ferroelectric domain; Ferroelectric thin film; Grounded tip effect; KFM; Surface potential relaxation

Indexed keywords

CHARGE CARRIERS; COULOMB BLOCKADE; MICROSCOPIC EXAMINATION; RELAXATION PROCESSES; SURFACE POTENTIAL;

FERROELECTRIC DOMAIN; FERROELECTRIC THIN FILM; GROUNDED TIP EFFECT; SURFACE POTENTIAL RELAXATION;

FERROELECTRIC THIN FILMS;

EID: 38849176979     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580601085552     Document Type: Conference Paper

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