Nanostructuring GaN using microsphere lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 76-79

  Ng, W N ^a   Leung, C H ^a   Lai, P T ^a   Choi, H W ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMISSION; MICROSPHERES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SPIN COATING;

LIGHT EMISSION INTENSITY; PHOTOLUMINESCENCE MEASUREMENTS; TWOFOLD ENHANCEMENT;

NANOSTRUCTURED MATERIALS;

EID: 38849173878     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2819265     Document Type: Article

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