Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 411-414

  Sugai, Maki ^a   Kochiya, Toshio ^a   Oyama, Yutaka ^a   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

A. Semiconductors; A. Thin films; B. Epitaxial growth; C. X ray diffraction; D. Lattice dynamics

Indexed keywords

LATTICE VIBRATIONS; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LATERAL OVERGROWTH (ELO); HUBER ETCHING;

LIQUID PHASE EPITAXY;

EID: 38749132322     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.005     Document Type: Article

References (2)

1. Parillaued O., Guil-Lafon E., Gerard B., Etienne P., and Pribat P. Appl. Phys. Lett. 68 19 (1996) 2654
2. Kochiya T., Oyama Y., Kimura T., Suto K., and Nishizawa J. J. Cryst. Growth 281 (2005) 263