-
1
-
-
85045226997
-
-
Fogg, G. E. Nature 1944, 154, 515-515.
-
(1944)
Nature
, vol.154
, pp. 515-515
-
-
Fogg, G.E.1
-
3
-
-
84964144090
-
-
Schuyten, H. A.; Reid, D. J.; Weaver, J. W.; Frick, J. G. Text. Res. J. 1948, 18, 396-415.
-
(1948)
Text. Res. J
, vol.18
, pp. 396-415
-
-
Schuyten, H.A.1
Reid, D.J.2
Weaver, J.W.3
Frick, J.G.4
-
4
-
-
33746527506
-
-
Schuyten, H. A.; Reid, D. J.; Weaver, J. W.; Frick, J. G. Text. Res. J. 1948, 18, 490-503.
-
(1948)
Text. Res. J
, vol.18
, pp. 490-503
-
-
Schuyten, H.A.1
Reid, D.J.2
Weaver, J.W.3
Frick, J.G.4
-
5
-
-
32644440680
-
-
Bartell, F. E.; Purcell, W. R.; Dodd, C. G. Discuss. Faraday Soc. 1948, 3, 257-264.
-
(1948)
Discuss. Faraday Soc
, vol.3
, pp. 257-264
-
-
Bartell, F.E.1
Purcell, W.R.2
Dodd, C.G.3
-
7
-
-
38749112403
-
-
U.S. Patent 2,306,222, December 22
-
Patnode, W. I. U.S. Patent 2,306,222, December 22, 1942.
-
(1942)
-
-
Patnode, W.I.1
-
8
-
-
38749098886
-
-
U.S. Patent 2,439,689, April 13
-
Hyde, J. F. U.S. Patent 2,439,689, April 13, 1948.
-
(1948)
-
-
Hyde, J.F.1
-
11
-
-
24344473340
-
-
Sun, T.; Feng, L.; Gao, X.; Jiang, L. Acc. Chem. Res. 2005, 38, 644-652.
-
(2005)
Acc. Chem. Res
, vol.38
, pp. 644-652
-
-
Sun, T.1
Feng, L.2
Gao, X.3
Jiang, L.4
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14
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-
38749146698
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The scant citations to earlier work in the literature demonstrate that there is a disconnect between what was of interest in the 1940s and the recent research on superhydrophobicity. Publication and patenting of much of the GE and Corning research were delayed or never occurred because of World War II, and the reports that eventually appeared did not report contact angle data
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The scant citations to earlier work in the literature demonstrate that there is a disconnect between what was of interest in the 1940s and the recent research on superhydrophobicity. Publication and patenting of much of the GE and Corning research were delayed or never occurred because of World War II, and the reports that eventually appeared did not report contact angle data.
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16
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33750498260
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Artus, G. R. J.; Jung, S.; Zimmermann, J.; Gautschi, H.-P.; Marquardt, K.; Seeger, S. Adv. Mater. 2006, 18, 2758-2762.
-
(2006)
Adv. Mater
, vol.18
, pp. 2758-2762
-
-
Artus, G.R.J.1
Jung, S.2
Zimmermann, J.3
Gautschi, H.-P.4
Marquardt, K.5
Seeger, S.6
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17
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-
34249662098
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-
Rollings, D. A. E.; Tsoi, S.; Sit, J. C.; Veinot. G. C. Langmuir 2007, 23, 5275-5278.
-
(2007)
Langmuir
, vol.23
, pp. 5275-5278
-
-
Rollings, D.A.E.1
Tsoi, S.2
Sit, J.C.3
Veinot, G.C.4
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18
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38749123299
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U.S. Patent 2,412,470, December 10, application February 22, 1943
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Norton, F. J. U.S. Patent 2,412,470, December 10, 1946 (application February 22, 1943).
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(1946)
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-
Norton, F.J.1
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21
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38749151140
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29 These thickness values assume smooth surfaces and so are meaningful only in terms of relative amounts of the product formed.
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29 These "thickness values" assume smooth surfaces and so are meaningful only in terms of relative amounts of the product formed.
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22
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38749118462
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Contact angle measurements were made with a Ramè-Hart telescopic goniometer equipped with a Gilmont syringe and a 24-gauge flat-tipped needle
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Contact angle measurements were made with a Ramè-Hart telescopic goniometer equipped with a Gilmont syringe and a 24-gauge flat-tipped needle.
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24
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0032634742
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for a discussion of and references to earlier reports of extremely hydrophobic surfaces. See
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See Chen, W.; Fadeev, A. Y.; Hsieh, M. C.; Öner, D.; McCarthy, T. J. Langmuir 1999, 15, 3395-3399 for a discussion of and references to earlier reports of extremely hydrophobic surfaces.
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(1999)
Langmuir
, vol.15
, pp. 3395-3399
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Chen, W.1
Fadeev, A.Y.2
Hsieh, M.C.3
Öner, D.4
McCarthy, T.J.5
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27
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0033616108
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Silicon wafers were coated (magnetron sputtering) with ∼100 nm of titanium and were cleaned with oxygen plasma prior to reaction. No silicon was observed in these samples by XPS prior to reaction. See Fadeev, A. Y.; McCarthy, T. J. J. Am. Chem. Soc. 1999, 121, 12184-12185.
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Silicon wafers were coated (magnetron sputtering) with ∼100 nm of titanium and were cleaned with oxygen plasma prior to reaction. No silicon was observed in these samples by XPS prior to reaction. See Fadeev, A. Y.; McCarthy, T. J. J. Am. Chem. Soc. 1999, 121, 12184-12185.
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