Predicted lattice relaxation around point defects in zinc selenide

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 3, 2001, Pages

  Muratov, Leonid ^a   Little, Scott ^a   Yang, Yaxiang ^a   Cooper, Bernard R ^a   Myers, Thomas H ^a   Wills, John M ^b  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SELENIDE; ZINC DERIVATIVE;

ARTICLE; ATOM; CALCULATION; CHEMICAL ANALYSIS; FORCE; OPTICS; SEMICONDUCTOR;

EID: 0034895806     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.035206     Document Type: Article

References (29)

1. S. Taniguchi, T. Hino, S. Itoh, K. Nakano, N. Nakayama, A. Ishibashi, and M. Ikeda, Electron. Lett.32, 552 (1996).
2. A. Ishibashi, J. Cryst. Growth159, 555 (1996);
3. K. Nakano and A. Ishibani (private communication); Workshop on the Physics and Chemistry of II-VI Semiconductors, Las Vegas, NV, 1996 (unpublished).
4. I S. Hauksson, J. Simpson, S Y. Wang, K A. Prior, and B C. Cavenett, Appl. Phys. Lett.61, 2208 (1992).
5. B N. Murdin, B C. Cavenett, C R. Pidgeon, J. Simpson, I. Hauksson, and K A. Prior, Appl. Phys. Lett.63, 2411 (1993).
6. T A. Kennedy, E R. Glaser, B N. Murdin, C R. Pidgeon, K A. Prior, and B C. Cavenett, Appl. Phys. Lett.65, 1112 (1994).
7. T. Yao, T. Matsumoto, S. Sasaki, C K. Chung, Z. Zhu, and F. Nishiyama, J. Cryst. Growth138, 290 (1994).
8. S D. Setzler, M. Moldovan, Yu. Zhonghai, T H. Myers, N C. Giles, and L E. Halliburton, Appl. Phys. Lett.70, 2274 (1997).
9. D B. Laks, C G. Van-de-Walle, G F. Neumark, and S T. Pantelides, Phys. Rev. Lett.66, 648 (1991).
10. D B. Laks, C G. Van-de-Walle, G F. Neumark, P E. Blochl, and S T. Pantelides, Phys. Rev. B45, 10 965 (1992).
11. A. Garcia and J E. Northrup, Phys. Rev. Lett.74, 113 (1995).
12. S. Little and B R. Cooper, Talk E13.4 Meeting of Materials Research Society, Boston, 1996 (unpublished); Abstract N26.4 [Bull. Am. Phys. Soc.42, 638 (1997)].
13. S.-H. Wei and A. Zunger, Phys. Rev. B37, 8958 (1988).
14. Gun-Do-Lee, M H. Lee, and Jisoon-Ihm, Phys. Rev. B52, 1459 (1995).
15. C G. Van-de-Walle, D B. Laks, G F. Neumark, and S T. Pantelides, Phys. Rev. B47, 9425 (1993).
16. Byoung-Ho-Cheong, C H. Park, and K J. Chang, Phys. Rev. B51, 10 610 (1995).
17. C H. Park and D J. Chadi, Phys. Rev. Lett.75, 1134 (1995).
18. S. Pöykkö, M J. Puska, T. Korhonen, and R M. Nieminen, Mater. Sci. Eng., BB43, 1 (1997).
19. S. Pöykkö, M J. Puska, and R M. Nieminen, Phys. Rev. B57, 12 174 (1998).
20. S. Gundel, D. Albert, J. Nürnberger, and W. Faschinger, Phys. Rev. B60, R16271 (1999).
21. S G. Louie, S. Froyen, and M L. Cohen, Phys. Rev. B26, 1738 (1982).
22. J. M. Wills (unpublished); D L. Price and B R. Cooper, Phys. Rev. B39, 4945 (1989);
23. D L. Price, J M. Wills, and B R. Cooper, 46, 11 368 (1992).
24. J. M. Wills, O. Eriksson, M. Alouani, and D. L. Price, Electronic Structure and Physical Properties of Solids, edited by H. Dreysse (Springer-Verlag, Berlin, 2000), pp. 148–167.
25. C S. Wang and B M. Klein, Phys. Rev. B24, 3393 (1981).
26. M. Methfessel, Phys. Rev. B38, 1537 (1988).
27. D Y. Jeon, H P. Gislason, and G D. Watkins, Phys. Rev. B48, 7872 (1993).
28. J. Petruzzello, J. Gaines, P. Van-Der-Sluis, D. Olego, and C. Ponzoni, Appl. Phys. Lett.62, 1496 (1993).
29. R. W. G. Wyckoff, Crystal Structures, 2nd ed. (Interscience Publishers, New York, 1964), Vol. 2, p. 5.