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Volumn 997, Issue , 2007, Pages 35-49

Materials challenges in automotive embedded non-volatile memories

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE ENGINEERING; FLASH MEMORY; LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; NANOCRYSTALS; PARAMETER ESTIMATION; PERMITTIVITY; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

EID: 38549148324     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0997-i02-01     Document Type: Conference Paper
Times cited : (1)

References (9)
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    • December
    • R. Daniels. A Participant's Perspective. IEEE Micro, 46:21, December 1996.
    • (1996) IEEE Micro , vol.46 , pp. 21
    • Daniels, R.1
  • 3
    • 84944812174 scopus 로고
    • A Floating Gate and its Application to Memory Devices
    • D. Kahng and S. Sze. A Floating Gate and its Application to Memory Devices. Bell Syst. Tech. J., 46:1288, 1967.
    • (1967) Bell Syst. Tech. J , vol.46 , pp. 1288
    • Kahng, D.1    Sze, S.2
  • 4
    • 38549100461 scopus 로고    scopus 로고
    • P. Kuhn et al. A Reliability Methodology for Low Temperature Data Retention in Floating Gate Nonvolatile Memories. In 2001 International Reliability Physics Symposium, Orlando, FL., 2001.
    • P. Kuhn et al. A Reliability Methodology for Low Temperature Data Retention in Floating Gate Nonvolatile Memories. In 2001 International Reliability Physics Symposium, Orlando, FL., 2001.
  • 5
    • 17644429462 scopus 로고    scopus 로고
    • A 6V Embedded 90 nm Silicon Nanocrystal Nonvolatile Memory
    • Washington, D.C
    • R. Muralidhar et al. A 6V Embedded 90 nm Silicon Nanocrystal Nonvolatile Memory. In 2003 International Electron Devices Meeting, Washington, D.C., 2003.
    • (2003) 2003 International Electron Devices Meeting
    • Muralidhar, R.1
  • 7
    • 33751051510 scopus 로고    scopus 로고
    • Gate Disturb Reduction in a Silicon Nanocrystal Flash EEPROM by Means of Natural Threshold Voltage Reduction
    • Monterey, CA
    • C. Swift et al. Gate Disturb Reduction in a Silicon Nanocrystal Flash EEPROM by Means of Natural Threshold Voltage Reduction. In 2006 Nonvolatile Semiconductor Memory Workshop, Monterey, CA, 2006.
    • (2006) 2006 Nonvolatile Semiconductor Memory Workshop
    • Swift, C.1
  • 8
    • 0029516376 scopus 로고
    • Volatile and Non-Volatile Memories in Silicon with Nanocrystal Storage
    • Washington, D.C
    • S. Tiwari. Volatile and Non-Volatile Memories in Silicon with Nanocrystal Storage. In 1995 International Electron Devices Meeting, Washington, D.C., 1995.
    • (1995) 1995 International Electron Devices Meeting
    • Tiwari, S.1
  • 9
    • 55549142266 scopus 로고
    • The Variable Threshold Transistor, a New Electrically Alterable Non-Destructive Read Only Storage Device
    • Washington, D.C
    • H. Wegener et al. The Variable Threshold Transistor, a New Electrically Alterable Non-Destructive Read Only Storage Device. In 1967 International Electron Devices Meeting, Washington, D.C., 1967.
    • (1967) 1967 International Electron Devices Meeting
    • Wegener, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.