Estimation of detrimental impact of new metal candidates in advanced microelectronics

Solid State Phenomena

Volumn 134, Issue , 2008, Pages 247-250

  Borde, Y ^a   Danel, A ^b   Roche, A ^a   Grouillet, A ^b   Veillerot, M ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

Contamination; Lifetime; Metal; Silicon

Indexed keywords

EID: 38549105055     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.134.247     Document Type: Conference Paper

References (4)

1. C. Bigot et al., "Influence of metal contamination in the measurement of p-type Cz silicon wafer lifetime and impact on the oxide growth"; in the proceedings of GADEST 2005, Giens, France.
2. K. Graff: "Metal impurities in silicon-device fabrication"; Ed. Springer, Heidelberg, Germany, 1995.
3. H.-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tutto, T. Pavelka, and G. Wachutka, J. Electrochem. Soc., 148(11), (2001), p. G655-G661.
4. F. Holsteins, J. Roels, K. Kenis, Q, T. Le, P. W. Mertens, IEEE, (2003), pp. 378-382.