Kinetics of reactive ion etching upon single-walled carbon nanotubes

Applied Physics Letters

Volumn 92, Issue 3, 2008, Pages

  Kato, Toshiaki ^a   Hatakeyama, Rikizo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

KINETIC PARAMETERS; MATHEMATICAL MODELS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING;

GROWTH EQUATION; TIME EVOLUTION STUDY;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 38549102525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2837463     Document Type: Article

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