Characteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors

Solid State Phenomena

Volumn 124-126, Issue PART 1, 2007, Pages 247-250

  Lee, Won Jun ^a   Chun, Min Ho ^b   Cheong, Kwang Su ^b   Park, Kwang Chol ^c   Park, Chong Ook ^c   Cao, Guozhong ^d   Rha, Sa Kyun ^b  

^a Sejong University   (South Korea)

^b Hanbat National University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d University of Washington   (United States)

Author keywords

Atomic layer deposition (ALD)

Indexed keywords

ATOMIC LAYER DEPOSITION; GROWTH (MATERIALS); OZONE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; THIN FILM TRANSISTORS;

DICHLOROSILANE; LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS;

THIN FILMS;

EID: 38549085882     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/3-908451-31-0.247     Document Type: Conference Paper

References (4)

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3. T. Suntola: Thin Solid Films 225 (1993), p. 96.
4. J.-H. Lee, U.-J. Kim, C.-H. Han, S.-K. Rha, W.-J. Lee and C.-O. Park: Jpn. J. Appl. Phys. 43 (2004) p. L328.