High temperature applications of 4H-SiC vertical junction field-effect transistors and schottky diodes

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 987-990

  Bhatnagar, P ^a   Wright, N G ^a   Horsfall, A B ^a   Johnson, C M ^b   Uren, M J ^c   Hilton, K P ^c   Munday, A G ^c   Hydes, A J ^c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c QINETIQ   (United Kingdom)

Author keywords

Boost converter; Power amplifiers; VJFET

Indexed keywords

DC-DC CONVERTERS; ELECTRIC INVERTERS; HIGH TEMPERATURE APPLICATIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER AMPLIFIERS; POWER SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER DIODES;

BOOST CONVERTER; CIRCUIT APPLICATION; DC-DC BOOST CONVERTERS; SCHOTTKY DIODES; SIC SCHOTTKY DIODE; SILICON CARBIDES (SIC); VERTICAL JUNCTION FIELD EFFECT TRANSISTORS; VJFET;

SILICON CARBIDE;

EID: 38449096733     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.987     Document Type: Conference Paper

References (7)

1. Goldberg Y, et al., Properties of advanced semiconductor materials Wiley; 2001.
2. J.N. Merrett, W.A. Draper, J.R.B. Casady, et al.: International Conference on High Temperature Electronics (HiTEC), 2004, Santa Fe, USA, May 17-20 2004.
3. J.H. Zhao, X. Li, et al.:, Mat. Sci. Forum Vols 389 -393(2002), p. 1223
4. P. Bhatnagar, N.G. Wright, et. al., Analysing High Temperature Characterization of 4H-SiC VJFET, submitted to Materials Science Forum (2007)
5. K. Vassilevski, I. Nikitina, et al.: High voltage silicon carbide Schottky diodes with single zone junction termination extension, submitted to Materials Science Forum (2007)
6. N. Mohan T.M. Undeland, and W.P. Robbins: Power Electronics: Converter, Applications and Design (Wiley Publishers, 2002)
7. Ramshaw R.S: Power Electronics Semiconductors Switches, (Chapman & Hall, 1993)