Influence of a finite energy width on the hot electron double-slit interference experiment: A design of the emitter structure

Journal of Applied Physics

Volumn 82, Issue 8, 1997, Pages 3846-3852

  Hongo, Hiroo ^a   Miyamoto, Yasuyuki ^a   Gault, Michael ^a   Furuya, Kazuhito ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; FERMI LEVEL; HOT CARRIERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES;

DOUBLE SLIT INTERFERENCE; FINITE ENERGY WIDTH; GRADED EMITTER; HOT ELECTRON;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031248356     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365749     Document Type: Article

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