A thermal model for insulated gate bipolar transistor module

IEEE Transactions on Power Electronics

Volumn 19, Issue 4, 2004, Pages 902-907

  Luo, Zhaohui ^a   Ahn, Hyungkeun ^b   El Nokali, Mahmoud A ^a  

^a University of Pittsburgh   (United States)

^b Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; HEAT CONDUCTION; HEAT SINKS; MATHEMATICAL MODELS; THERMAL CONDUCTIVITY; THERMAL VARIABLES MEASUREMENT; THERMODYNAMICS;

THERMAL IMPEDANCE; THERMAL MODEL; THERMAL RESISTOR-CAPACITOR NETWORK;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 3843126493     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2004.830089     Document Type: Article

References (13)

1. B. J. Baliga, M. S. Adler, R. P. Love, P. V. Gray, and N. D. Zommer, "The insulated gate transistor: a new three-terminal MOS-controlled bipolar power device," IEEE Trans. Electron Devices, vol. ED-31, pp. 821-828, June 1984.
2. A. R. Hefner, "A dynamic electro-thermal model for the IGBT," IEEE Trans. Ind. Applicat., vol. 30, pp. 394-405, Mar./Apr. 1994.
3. A. Ammous, K. Ammous, H. Morel, B. Allard, D. Bergogne, F. Sellami, and J. P. Chante, "Electrothermal modeling of IGBTs: application to short-circuit conditions," IEEE Trans. Power Electron., vol. 15, pp: 778-790, July 2000.
4. T. Kikunaga and T. Ohi, "Analysis and simulation technologies for high-reliability design of power modules," R & D Progress Rep., Mitsubishi, 2003.
5. J. T. Hsu and L. Vu-Quoc, "A rational formulation of thermal circuit models for electrothermal simulation - part I: finite element method," IEEE Trans. Circuits Syst. I, vol. 43, pp. 721-732, Sept. 1996.
6. A. Ammous, S. Ghedira, B. Allard, H. Morel, and D. Renault, "Choosing a thermal model for electrothermal simulation of power semiconductor devices," IEEE Trans. Power Electron., vol. 14, pp. 300-307, Mar. 1999.
7. G. L. Skibinski and W. A. Sethares, "Thermal parameter estimation using recursive identification," IEEE Trans. Power Electron., vol. 6, pp. 228-239, Apr. 1991.
8. C. S. Yun, P. Malberti, M. Ciappa, and W. Fichtner, "Thermal component model for electrothermal analysis of IGBT module systems," IEEE Trans. Adv. Packag., vol. 24, pp. 401-406, Aug. 2001.
9. Technical Information Documents, Eupec IGBT 1200R17KF6, 2003.
10. F. Blaabjerg, J. K. Pedersen, K. D. Madsen, and K. F. Rasmussen, "An advanced microprocessor based temperature controlled heatsink," in Proc. International Conf. Industrial Electronics, Control, and Instrumentation (IECON'93), vol. 2, 1993, pp. 785-789.
11. ANYSYS, Inc., Trademark Name, Houston, PA, 2003.
12. Fundamentals of thermal resistance measurement, Analysis Tech www.analysistech.com, 2003.
13. Z. Luo, Ph.D. dissertation, Univ. Pittsburgh, Pittsburgh, PA, Oct. 2002.