Influence of activation energy on LER in chemically amplified KrF photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 2, 2004, Pages 790-800

  Kim, Jae Hyun ^a   Lee, Chang Ho ^a   Park, Seok Bong ^a   Kim, Won Mi ^a   Moon, Sang Sik ^a   Kim, Kyung Mee ^a   Lee, Shi Yong ^a   Yoon, Sangwoong ^a   Kim, Young Ho ^a   Chon, Sang Mun ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

248 nm single layer resist; Acetal; Acid diffusion; Activation energy; Annealing; LER

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMIC FORCE MICROSCOPY; LITHOGRAPHY; OPTIMIZATION; PHOTORESISTORS; SCANNING ELECTRON MICROSCOPY;

248-NM SINGLE LAYER RESIST; ACETALS; ACID DIFFUSION; LINE EDGE ROUGHNESS (LER);

LASER OPTICS;

EID: 3843100311     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533880     Document Type: Conference Paper

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