New surface treatment method for improving the interface characteristics of CdTe/Hg1-xCdxTe Heterostructure

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 556-560

  Lee, Seong Hoon ^a,b   Shin, Hyungcheol ^a   Lee, Hee Chul ^a   Kim, Choong Ki ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hyundai MicroElectronics   (South Korea)

Author keywords

AFM; CdTe HgCdTe; Chemical oxidation of HgCdTe; Fixed charge density; Hysteresis capacitance voltage (C V) curve; MIS capacitors; Slow surface state density

Indexed keywords

EID: 0000483119     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0193-6     Document Type: Article

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