Hydrophilic silicon oxide film by pulsed plasma CVD

Shinku/Journal of the Vacuum Society of Japan

Volumn 50, Issue 10, 2007, Pages 635-638

  Kaizuma, Yoshihiro ^a  

^a Shinko Seiki Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAS SUPPLY; HYDROPHILICITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SURFACE ROUGHNESS;

HYDROPHILIC SILICON OXIDE FILMS; PULSED GAS SUPPLY;

OXIDE FILMS;

EID: 38349181114     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.50.635     Document Type: Article

References (4)

1. Japanese source
2. 2 films at low temperature (80°C) with intermediate plasma treatment J. Vac. Sci. Technol. A20 (2), Mar/Apr 2002 398.
3. Kenji Hiramatsu, Hiroshi Ohnishi, Toru Takahama and Kenichiro Yamanishi: Formation of TiN films with low Cl concentration by pulsed plasma chemical vapor deposition J. Vac. Sci. Technol. A14 (3), May/Jun 1996 1037.
4. Japanese source