Defect generation in some transition-metal suicides in accommodating the deviation from the stoichiometric compositions

Materials Science Forum

Volumn 561-565, Issue PART 1, 2007, Pages 443-446

  Inui, Haruyuki ^a   Tanaka, Katsushi ^a   Kishida, Kyosuke ^a   Harada, Shunta ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Defect engineering; Defect structure; Semiconducting transition metal silicides; Valence electron counting rule

Indexed keywords

CRYSTAL STRUCTURE; MICROSTRUCTURE; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; TERNARY ALLOYS;

DEFECT ENGINEERING; SEMICONDUCTING TRANSITION-METAL SILICIDES; STOICHIOMETRIC COMPOSITIONS; VALENCE ELECTRON COUNTING RULES;

TRANSITION METALS;

EID: 38349149596     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-462-6.443     Document Type: Conference Paper

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