Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method

Materials Science Forum

Volumn 544-545, Issue , 2007, Pages 689-692

  Kuk, Seoungwoo ^a   Bang, Seokhwan ^a   Kim, Inhoe ^a   Jeon, Sunyeol ^a   Jeon, Hyeongtag ^a   Park, Hyung Ho ^b   Chang, Ho Jung ^c  

^a Hanyang University   (South Korea)

^b Yonsei University   (South Korea)

^c Dankook University   (South Korea)

Author keywords

ALD; Hall effect measurement; ZnS

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; ENERGY GAP; HYDROGEN SULFIDE; THIN FILM TRANSISTORS; ZINC SULFIDE;

CHANNEL MOBILITY; DIETHYL-ZINC (DEZ); HALL-EFFECT MEASUREMENT;

THIN FILMS;

EID: 38349113840     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-431-6.689     Document Type: Conference Paper

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