Temperature effect on the electrical properties of undoped and vanadium-doped ZnTe thin films

Renewable Energy

Volumn 33, Issue 4, 2008, Pages 642-647

  Hossain, M S ^a   Islam, R ^a   Khan, K A ^a  

^a UNIVERSITY OF RAJSHAHI   (Bangladesh)

Author keywords

Activation energy; E beam technique; Electrical conductivity; Temperature dependence of resistivity; Thermoelectric power; ZnTe:V thin films

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; THERMOELECTRIC POWER;

DEPOSITION RATE; E-BEAM TECHNIQUE; GLASS SUBSTRATE;

THIN FILMS;

ACTIVATION ENERGY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; THERMOELECTRIC POWER; THIN FILMS;

ACTIVATION ENERGY; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; TEMPERATURE EFFECT; VANADIUM; X-RAY DIFFRACTION;

EID: 38049074850     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.renene.2007.04.003     Document Type: Article

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