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Volumn 92, Issue 1, 2008, Pages

Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FARADAY EFFECT; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS; SILICON WAFERS;

DOPED SILICON; LOW CARRIER DENSITY REGION; TERAHERTZ FREQUENCY FARADAY EFFECT;

SILICON;

EID: 38049044333 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2830697 Document Type: Article

Times cited : (44)

References (12)

1
- 33748855070
- APPLAB 0003-6951 10.1063/1.103120.
- M. van Exter and D. Grischkowsky, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.103120 56, 1694 (1990).
- (1990) Appl. Phys. Lett. , vol.56 , pp. 1694
- Van Exter, M.¹ Grischkowsky, D.²

2
- 0000973575
- PRLTAO 0031-9007 10.1103/PhysRevLett.78.1106.
- T.-I. Jeon and D. Grischkowsky, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.78.1106 78, 1106 (1997).
- (1997) Phys. Rev. Lett. , vol.78 , pp. 1106
- Jeon, T.-I.¹ Grischkowsky, D.²

3
- 0039557379
- PRLTAO 0031-9007 10.1103/PhysRevLett.73.1537.
- S. Spielman, Beth Parks, J. Orenstein, D. T. Nemeth, F. Ludwig, J. Clarke, P. Merchant, and D. J. Lew, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.73.1537 73, 1537 (1994).
- (1994) Phys. Rev. Lett. , vol.73 , pp. 1537
- Spielman, S.¹ Parks, B.² Orenstein, J.³ Nemeth, D.T.⁴ Ludwig, F.⁵ Clarke, J.⁶ Merchant, P.⁷ Lew, D.J.⁸

4
- 0031558174
- APPLAB 0003-6951 10.1063/1.119456.
- D. M. Mittleman, J. Cunningham, M. C. Nuss, and M. Geva, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119456 71, 16 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 16
- Mittleman, D.M.¹ Cunningham, J.² Nuss, M.C.³ Geva, M.⁴

5
- 33747337234
- JAPIAU 0021-8979 10.1063/1.2219981.
- O. Morikawa, A. Quema, S. Nashima, H. Sumikura, T. Nagashima, and M. Hangyo, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2219981 100, 033105 (2006).
- (2006) J. Appl. Phys. , vol.100 , pp. 033105
- Morikawa, O.¹ Quema, A.² Nashima, S.³ Sumikura, H.⁴ Nagashima, T.⁵ Hangyo, M.⁶

6
- 79956005592
- APPLAB 0003-6951 10.1063/1.1492319.
- R. Shimano, Y. Ino, Yu. P. Svirko, and M. Kuwata-Gonokami, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1492319 81, 199 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 199
- Shimano, R.¹ Ino, Y.² Svirko, Yu.P.³ Kuwata-Gonokami, M.⁴

7
- 7544243305
- APPLAB 0003-6951 10.1063/1.1795980.
- R. Adomavičius, A. Urbanowicz, G. Molis, A. Krotkus, and E. Šatkovskis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1795980 85, 2463 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 2463
- Adomavičius, R.¹ Urbanowicz, A.² Molis, G.³ Krotkus, A.⁴ Šatkovskis, E.⁵

8
- 38049032054
- Optical Electronics, 4th ed. (Saunders College Publishing, Philadelphia), Cha
- A. Yariv, Optical Electronics, 4th ed. (Saunders College Publishing, Philadelphia, 1991), Chap., pp. 16-29.
- (1991) , pp. 16-29
- Yariv, A.¹

9
- 84973620367
- JOBPDE 0740-3224.
- D. Grischkowsky, S. Keiding, M. van Exter, and Ch. Fattinger, J. Opt. Soc. Am. B JOBPDE 0740-3224 7, 2006 (1990).
- (1990) J. Opt. Soc. Am. B , vol.7 , pp. 2006
- Grischkowsky, D.¹ Keiding, S.² Van Exter, M.³ Fattinger, Ch.⁴

10
- 9944244767
- PHRVAO 0031-899X 10.1103/PhysRev.138.A225.
- J. C. Hensel, H. Hasegawa, and M. Nakayama, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.138.A225 138, A225 (1965).
- (1965) Phys. Rev. , vol.138 , pp. 225
- Hensel, J.C.¹ Hasegawa, H.² Nakayama, M.³

11
- 38049030815
- Solid-State Physics: An Introduction to Principles of Materials Science, 3rd ed. (Springer, Berlin), Cha
- H. Ibach and H. Lüth, Solid-State Physics: An Introduction to Principles of Materials Science, 3rd ed. (Springer, Berlin, 2003), Chap., pp. 404-409.
- (2003) , pp. 404-409
- Ibach, H.¹ Lüth, H.²

12
- 3843088837
- PLRBAQ 0556-2805 10.1103/PhysRevB.10.638.
- S. T. Pantelides and C. T. Sah, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.10.638 10, 638 (1974).
- (1974) Phys. Rev. B , vol.10 , pp. 638
- Pantelides, S.T.¹ Sah, C.T.²

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