Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD

Journal of Crystal Growth

Volumn 297, Issue 1, 2006, Pages 44-51

  Kadoiwa, Kaoru ^a   Ono, Kenichi ^a   Ohkura, Yuji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

A1. Diffusion; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

DIFFUSION COEFFICIENTS; DOPING PROFILE; EPITAXIAL LAYERS; SEMICONDUCTING III-V MATERIAL;

INTERFACES (MATERIALS);

EID: 37849186806     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.028     Document Type: Article

References (8)

1. Kadoiwa K., Kato M., Motoda T., Mori K., Fujii N., Ochi S., Yasuda M., Sonoda T., and Murotani T. Proc. IPRM (1993) 699
2. Kadoiwa K., Kato M., Motoda T., Ishida T., Fujii N., Hayafuji N., Tsugami M., Sonoda T., Takamiya S., and Mitsui S. J. Crystal Growth 145 (1994) 147
3. Nelson A.W., and Westbrook L.D. J. Crystal Growth 68 (1984) 102
4. van Gurp G.J., Boudewijn P.R., Kempeners M.N.C., and Tjaden D.L.A. J. Appl. Phys. 61 (1987) 1846
5. van Gurp G.J., van Dongen T., Fontijn G.M., Jacobs J.M., and Tjaden D.L.A. J. Appl. Phys. 65 (1989) 553
6. Peiner E., Hansen K., Lübbe M., and Schlachetzki A. Jpn. J. Appl. Phys. 35 (1995) 557
7. Otsuka N., Kito M., Ishino M., Matsui Y., and Toujou F. J. Appl. Phys. 84 (1998) 4239
8. Gao Y. J. Appl. Phys. 64 (1988) 3760