Epitaxial Mg2SiO4 thin films with a spinel structure grown on Si substrates

Journal of Crystal Growth

Volumn 297, Issue 1, 2006, Pages 100-104

  Kang, L ^a,b   Gao, J ^a   Xu, H R ^a   Zhao, S Q ^b   Chen, H ^c   Wu, P H ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b NANJING UNIVERSITY   (China)

^c CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

A1. Crystal structure; A1. X ray diffraction; A3. Epitaxial growth; A3. Mg2SiO4 thin film; A3. Physical vapor deposition processes; B2. Dielectric materials

Indexed keywords

CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; MAGNESIUM COMPOUNDS; PHYSICAL VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

MG2SIO4 THIN FILM; SPINEL STRUCTURE; STOICHIOMETRIC RATIO;

THIN FILMS;

EID: 37849186143     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.036     Document Type: Article

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