Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 287-290

  Soueidan, M ^a   Ferro, G ^a   Stoemenos, J ^b   Polychroniadis, E K ^b   Chaussende, D ^c   Soares, F ^d   Juillaguet, S ^d   Camassel, J ^d   Monteil, Y ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^d UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

3C SiC; 6H SiC; Ge; Heteroepitaxy; Single domain; VLS

Indexed keywords

BACKSCATTERING; DEFECTS; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; EPITAXIAL LAYERS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BACKSCATTERING DIFFRACTION; MICRORAMAN SPECTROSCOPY; POSITIONING BOUNDARIES; SINGLE-DOMAIN; SPIRAL GROWTH;

SILICON CARBIDE;

EID: 37849049878     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.287     Document Type: Conference Paper

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