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Materials Science Forum

Volumn 514-516, Issue PART 2, 2006, Pages 1603-1607

Combination of IBA techniques for composition analysis of GaInAsSb films

(6) Corregidor, V a Chaves, P C a Reis, M A a Pascual Izarra, C a Alves, E a,b Barradas, N P a,b

a INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

Author keywords

IBA characterization; Metalorganic vapour phase epitaxy; Semiconducting III V; Thermophotovoltaics cells

Indexed keywords

ANGLE MEASUREMENT; FILM GROWTH; ION BEAMS; MATRIX ALGEBRA; METALLORGANIC VAPOR PHASE EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS;

SUBSTRATE ORIENTATION; THERMOPHOTOVOLTAICS CELLS;

SEMICONDUCTING FILMS;

EID: 37849022354 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.514-516.1603 Document Type: Conference Paper

Times cited : (6)

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