10kV, 87mΩcm2 normally-off 4H-SiC vertical junction field-effect transistors

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1187-1190

  Li, Yuzhu ^a   Alexandrov, Petre ^b   Zhang, Jianhui ^a,b   Li, Larry X ^b   Zhao, Jian H ^a  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

High voltage; JFET; Low on resistance; Normally off

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; HIGH TEMPERATURE APPLICATIONS; OXIDES; SILICON CARBIDE;

GATE OXIDE; LOW ON RESISTANCE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 37849007923     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1187     Document Type: Conference Paper

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