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Volumn 69, Issue 13, 2004, Pages

Ballistic magnetoresistance of electroplated nickel devices

Author keywords

[No Author keywords available]

Indexed keywords

NICKEL;

EID: 37649026845     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.132405     Document Type: Article
Times cited : (6)

References (35)
  • 1
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    • G. A. Prinz, Science 282, 1660 (1998); S. A. Wolf et al., ibid. 294, 1488 (2001); P. Ball, Nature (London) 404, 918 (2000).
    • (1998) Science , vol.282 , pp. 1660
    • Prinz, G.A.1
  • 2
    • 0035900398 scopus 로고    scopus 로고
    • G. A. Prinz, Science 282, 1660 (1998); S. A. Wolf et al., ibid. 294, 1488 (2001); P. Ball, Nature (London) 404, 918 (2000).
    • (2001) Science , vol.294 , pp. 1488
    • Wolf, S.A.1
  • 3
    • 0034720242 scopus 로고    scopus 로고
    • G. A. Prinz, Science 282, 1660 (1998); S. A. Wolf et al., ibid. 294, 1488 (2001); P. Ball, Nature (London) 404, 918 (2000).
    • (2000) Nature (London) , vol.404 , pp. 918
    • Ball, P.1
  • 5
    • 10944255865 scopus 로고    scopus 로고
    • high field are the resistance of NJ at lower and higher external applied fields, respectively. When the devices show higher resistance at the higher field, the BMR value is negative. Otherwise, it is positive 4 N. García, M. Muñoz, and Y.-W. Zhao, Phys. Rev. Lett. 82, 2923 (1999).
    • (1999) Phys. Rev. Lett. , vol.82 , pp. 2923
    • García, N.1    Muñoz, M.2    Zhao, Y.-W.3
  • 16
    • 33646644109 scopus 로고    scopus 로고
    • note
    • Firstly, a significant number of nickel vacancies exist within nickel oxide at GBs due to the nature of the original GBs. Secondly, it is quite evident that nickel oxide thickness varies across the junction with the thinnest part on the central line. Thirdly, along the central line, the thickness of the oxide increases from either end approaching the narrowest part of the junction.
  • 19
    • 33646648988 scopus 로고    scopus 로고
    • Lancaster University, Materials and Interfaces section, Lancaster, UK (unpublished)
    • Z. Szotek, "International Conference on Nanoelectronics," Lancaster University, Materials and Interfaces section, Lancaster, UK, 2003 (unpublished), http://www.lancs.ac.uk/users/esqn/nanoelectronics/talks.html (the easiest access to this source is by the Internet).
    • (2003) International Conference on Nanoelectronics
    • Szotek, Z.1
  • 26
    • 0035817087 scopus 로고    scopus 로고
    • B. Partoens and F. M. Peeters, Phys. Rev. Lett. 84, 4433 (2000); M. Pi et al., ibid. 87, 066801 (2001).
    • (2001) Phys. Rev. Lett. , vol.87 , pp. 066801
    • Pi, M.1
  • 28
    • 0038163769 scopus 로고    scopus 로고
    • Fransson et al., Phys. Rev. B 67, 205310 (2003).
    • (2003) Phys. Rev. B , vol.67 , pp. 205310
    • Fransson1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.