Defect characterization of homo-epitaxially grown 6H-SiC on (0001) silicon and (0001) carbon faces

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 409-412

  Stoemenos, J ^a   Di Cioccio, L ^b   Papaioannou, V ^a   David, D ^b   Pudda, C ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b CEA LETI   (France)

Author keywords

6H to 3C SiC Transformation; Microtwins

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; CRYSTAL DEFECTS; EPITAXIAL GROWTH; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SELECTED CROSS SECTION TRANSMISSION ELECTRON MICROSCOPY (XTEM);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743139482     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.409     Document Type: Article

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