The formation of super-dislocation/micropipe complexes in 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 371-374

  Giocondi, J ^a   Rohrer, G S ^a   Skowronski, M ^a   Balakrishna, V ^b   Augustine, G ^b   Hobgood, H McD ^b   Hopkins, R H ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Atomic Force Microscopy; Dislocations; Extended Defects; Micropipes

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SILICON CARBIDE; SINGLE CRYSTALS;

MICROPIPES; PHYSICAL VAPOR TRANSPORT METHOD;

SILICON WAFERS;

EID: 3743138381     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (5)

1. M. Dudley, S. Wang, W. Huang, C.H. Carter, Jr., V.F. Tsvetkov, and C. Fazi, J. Phys. D: Appl. Phys. 28 (1995) A63.
2. J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, G. Augustine, H.M. Hobgood, and R.H. Hopkins, III-Nitride, SiC, and Diamond Materials For Electronic Devices edited by D.K. Gaskill, C.D. Brandt, R.J. Nemanich (Mater. Res. Soc. Proc. 423, Pittsburgh, PA, 1996), p. 539.
3. J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, G. Augustine, H.M. Hobgood, and R.H. Hopkins, J. Crystal Growth, in press
4. F. C. Frank, Acta Cryst. 4 (1951) 497.
5. H.M. Hobgood, D.L. Barrett, J.P. McHugh, R.C. Clarke, S. Sriram, A.A. Burk, J. Greggi, C.D. Brandt, R.H. Hopkins, W.J. Choyke, J. Cryst. Growth 137 (1994) 181.